Analysis of analog and RF behaviors in junctionless double gate vertical MOSFET
نویسندگان
چکیده
منابع مشابه
Influence of High-κ Spacer on Analog/RF Performance of Asymmetric Underlap Double Gate MOSFET
Impact of high-κ spacer in Asymmetric underlap double gate MOS transistor is systematically investigated with the help of a two dimensional device simulator. A significant improvement in ON current, transconductance and intrinsic gain is observed in the device using high-κ spacer material. However due to higher capacitances, device with high-κ spacer shows smaller unity gain cut-off frequency c...
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ژورنال
عنوان ژورنال: Bulletin of Electrical Engineering and Informatics
سال: 2020
ISSN: 2302-9285,2089-3191
DOI: 10.11591/eei.v9i1.1861